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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TSM6NB60CI C0G
Taiwan Semiconductor Corporation

TSM6NB60CI C0G

Manufacturer Part Number TSM6NB60CI C0G
Manufacturer Taiwan Semiconductor Corporation
Detailed Description MOSFET N-CH 600V 6A ITO220AB
Package ITO-220AB
In Stock 3965 pcs
Data sheet Mult Dev EOL 3/Aug/2018
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4.5V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package ITO-220AB
Series -
Rds On (Max) @ Id, Vgs 1.6Ohm @ 3A, 10V
Power Dissipation (Max) 40W (Tc)
Package / Case TO-220-3 Full Pack, Isolated Tab
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 872 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 18.3 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)

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TSM6NB60CI C0G Datasheet PDF

Data sheet